n-channel enhancement mode power mosfet.
* VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ)
* High density cell design for ultra low Rdson
* Fully character.
General Features
* VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ)
The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28m.
Image gallery
TAGS
Download (Size : 390.12KB)