NCE6008AS - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power

Part number	NCE6008AS
Manufacturer	NCE Power
File Size	390.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6008AS Datasheet
Additional preview pages of the NCE6008AS datasheet.

The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

📁 Similar Datasheet

NCE6003M - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE6003X - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE6003XY - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE6003Y - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE6005AR - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE6005AS - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE6007S - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE6012AS - N-Channel 60V MOSFET (VBsemi)

Other Datasheets by NCE Power

Published: Nov 8, 2024 |